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DMP2104V
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-20
±12
Units
V
V
Continuous Drain Current (Note 4) V GS = -4.5V
Continuous Drain Current (Note 4) V GS = -4.5V
Continuous Drain Current (Note 4) V GS = -2.5V
Steady
State
t ≤ 5s
Steady
State
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
I D
I D
I D
-1.9
-1.5
-2.1
-1.65
-1.7
-1.3
A
A
A
Pulsed Drain Current
t p = 10 μ s
I DM
-4.0
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @T A = 25°C (Note 4)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J, T STG
Value
0.85
146
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV DSS
-20
?
?
V
V GS = 0V, I D = -250 μ A
Zero Gate Voltage Drain Current
Gate-Source Leakage
T J = 25 ° C
T J = 125 ° C
I DSS
I GSS
?
?
?
?
-1.0
-5.0
± 100
μ A
nA
V DS = -20V, V GS = 0V
V GS = ± 12V, V DS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
V GS(th)
R DS (ON)
-0.45
?
?
92
134
-1.0
150
200
V
m Ω
V DS = V GS , I D = -250 μ A
V GS = -4.5V, I D = -950mA
V GS = -2.5V, I D = -670mA
180
240
V GS = -1.8V, I D = -200mA
Forward Transconductance
Diode Forward Voltage (Note 5)
g FS
V SD
?
?
3.1
?
?
-0.9
S
V
V DS = -10V, I D = -810mA
V GS = 0V, I S = -360mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
?
?
?
320
80
60
?
?
?
pF
pF
pF
V DS = -16V, V GS = 0V
f = 1.0MHz
Notes:
4. Device mounted on FR-4 PCB with 1 inch square pads.
5. Short duration pulse test used to minimize self-heating effect.
DMP2104V
Document number: DS30942 Rev. 7 - 2
2 of 6
www.diodes.com
March 2011
? Diodes Incorporated
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